cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 1/9 MTB6D0N03AH8 cystek product specification n-channel logic level enhancement mode power mosfet MTB6D0N03AH8 bv dss 30v i d 56a r ds(on) @v gs =10v, i d =25a 6.8 m (typ) r ds(on) @v gs =4.5v, i d =20a 10.4 m (typ) features ? single drive requirement ? low on-resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? pb-free lead plating and halogen-free package symbol outline MTB6D0N03AH8 dfn5 6 pin 1 g gate d drain ssource ordering information device package shipping dfn 5 6 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTB6D0N03AH8-0-t6-g environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pcs / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 2/9 MTB6D0N03AH8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ t c =25 c, v gs =10v 56 continuous drain current @ t c =100 c, v gs =10v i d 35 pulsed drain current i dm 140 *1 avalanche current i as 30 a avalanche energy @ l=0.1mh, i d =30a, r g =25 e as 45 repetitive avalanche energy @ l=0.05mh e ar 15 *2 mj t c =25 c 50 total power dissipation t c =100 c p d 20 w operating junction and storage temperature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 2.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in2 copper pad of fr-4 board, t 10s; 125 c/w when mounted on minimum copper pad. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0v, i d =250 a v gs(th) 1.0 1.7 2.5 v v ds = v gs , i d =250 a g fs *1 - 25 - s v ds =5v, i d =20a i gss - - 100 na v gs = 20v - - 1 v ds =24v, v gs =0v i dss - - 25 a v ds =20v, v gs =0v, tj=125 c - 6.8 9 v gs =10v, i d =25a r ds(on) *1 - 10.4 15 m v gs =4.5v, i d =20a dynamic ciss - 802 - coss - 153 - crss - 98 - pf v gs =0v, v ds =15v, f=1mhz
cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 3/9 MTB6D0N03AH8 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions qg (v gs =10v) *1, 2 - 12 - qg (v gs =4.5v) *1, 2 - 8 - qgs *1, 2 - 2.9 - qgd *1, 2 - 4.4 - nc v ds =15v, v gs =10v, i d =25a t d(on) *1, 2 - 7 - tr *1, 2 - 4 - t d(off) *1, 2 - 15 - t f *1, 2 - 6 - ns v ds =15v, i d =20a, v gs =10v, r gs =2.7 rg - 4.7 - v gs =15mv, v ds =0v, f=1mhz source-drain diode i s *1 - - 50 i sm *3 - - 140 a v sd *1 - 0.87 1.3 v i f =25a, v gs =0v trr - 22 - ns qrr - 12 - nc i f =i s , di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 4/9 MTB6D0N03AH8 cystek product specification typical characteristics typical output characteristics 0 20 40 60 80 100 120 0246810 v ds , drain-source voltage(v) i d , drain current(a) 10v, 7v, 6v, 5v v gs =3v v gs =4v v gs =2.5 v v gs =4.5v v gs =3.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 1000 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =2.5v v gs =3v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =25a r ds( on) @tj=25c : 6.8 m typ v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =25a
cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 5/9 MTB6D0N03AH8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss f=1mhz threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 3 6 9 12 15 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =25a v ds =5v v ds =10v v ds =15v maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100m 1ms 100 s r ds( on) limit t c =25c, tj=150c v gs =10v,r jc =2.5c/w single pulse 1s maximum drain current vs case temperature 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =2.5c/w
cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 6/9 MTB6D0N03AH8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 20 40 60 80 100 120 0246 v gs , gate-source voltage(v) i d , drain current (a) 8 v ds =10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance d=0.5 0.2 0.1 1.r jc (t)=r(t)*r jc 2.duty factor, d=t1/t2 3.t jm -t c =p dm *r jc (t) 4.r jc =2.5c/w 0.05 single pulse 0.02 0.01
cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 7/9 MTB6D0N03AH8 cystek product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 8/9 MTB6D0N03AH8 cystek product specification recommended wave soldering condition peak temperature soldering time product pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. 6 minutes max. time 25 c to peak temperature 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c709h8 issued date : 2014.03.13 revised date : 2014.03.14 page no. : 9/9 MTB6D0N03AH8 cystek product specification dfn5 6 dimension millimeters inches millimeters 8-lead dfn5 6 plastic package cys package code : h8 marking : b6d0 n03at device n ame date code inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.000 0.035 0.039 k 1.190 1.390 0.047 0.055 a3 0.254 ref 0.010 ref b 0.350 0.450 0.014 0.018 d 4.944 5.096 0.195 0.201 e 1.270 typ. 0.050 typ. e 5.974 6.126 0.235 0.241 l 0.559 0.711 0.022 0.028 d1 3.910 4.110 0.154 0.162 l1 0.424 0.576 0.017 0.023 e1 3.375 3.575 0.133 0.141 h 0.574 0.726 0.023 0.029 d2 4.824 4.976 0.190 0.196 10 12 10 12 e2 5.674 5.826 0.223 0.229 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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